The BLW96/01,112 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 55V and a maximum collector current of 12A. It has a maximum power dissipation of 340W and can operate over a temperature range of -65°C to 200°C. The transistor is packaged in a surface mount package with a lead-free finish and is available in quantities of 20 per rail or tube. It has a frequency of 245MHz and a transition frequency of 235MHz.
Frequency245MHz
MountingSurface Mount, Screw
PolarityNPN
Power340W
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Technical Specifications
NXP BLW96/01,112 technical specifications.
General
| Collector Emitter Breakdown Voltage | 55V |
| Collector Emitter Voltage (VCEO) | 55V |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 245MHz |
| Height | 7.27mm |
| Lead Free | Lead Free |
| Length | 28.45mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 340W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 340W |
| Transition Frequency | 235MHz |
| Width | 28.45mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLW96/01,112 Datasheet
Download the complete datasheet for NXP BLW96/01,112 to view detailed technical specifications.
No datasheet is available for this part.