N-channel Si small signal MOSFET in a SOT package, featuring a 55V drain-source breakdown voltage and a continuous drain current of 335mA. Offers a maximum drain-source on-resistance of 4 Ohms and a gate-source voltage of 10V. This RoHS compliant component operates within a temperature range of -65°C to 150°C, with a power dissipation of 830mW. Designed for surface-mount applications with tin contact plating.
PackageSOT
Resistance4R
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP BSH111215 technical specifications.
General
Package/Case
SOT
Contact Plating
Tin
Continuous Drain Current (ID)
335mA
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
2.4R
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
4R
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
10V
Height
1mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
3mm
Max Dual Supply Voltage
55V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Nominal Vgs
1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
4R
Reach SVHC Compliant
No
Resistance
4R
RoHS Compliant
Yes
Series
TrenchMOS™
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
11ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BSH111215 Datasheet
Download the complete datasheet for NXP BSH111215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.