N-channel Si small signal MOSFET in a SOT package, featuring a 55V drain-source breakdown voltage and a continuous drain current of 335mA. Offers a maximum drain-source on-resistance of 4 Ohms and a gate-source voltage of 10V. This RoHS compliant component operates within a temperature range of -65°C to 150°C, with a power dissipation of 830mW. Designed for surface-mount applications with tin contact plating.
PackageSOT
Resistance4R
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP BSH111215 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 335mA |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 4R |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| Resistance | 4R |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 11ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSH111215 Datasheet
Download the complete datasheet for NXP BSH111215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.