N-channel TrenchMOS™ Junction Field-Effect Transistor (JFET) in a SOT-23 surface mount package. Features a 60V Drain to Source Breakdown Voltage (Vdss) and a 300mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On Max) of 5 Ohms. Operates with a Gate to Source Voltage (Vgs) up to 15V and a nominal Vgs of 2V. This RoHS compliant component has a maximum power dissipation of 830mW and an operating temperature range of -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP BSH112,235 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
300mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
75V
Gate to Source Voltage (Vgs)
15V
Input Capacitance
40pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Termination
SMD/SMT
Compliance
RoHS
Compliant
Datasheet
NXP BSH112,235 Datasheet
Download the complete datasheet for NXP BSH112,235 to view detailed technical specifications.
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