The BSH201T/R is a P-CHANNEL MOSFET with a continuous drain current rating of 300mA and a drain to source breakdown voltage of 60V. It has a power dissipation of 417mW and an input capacitance of 70pF. The device is packaged in a SOT-23 package and is lead free. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOT-23
Current Rating-300mA
PolarityP-CHANNEL
Power417mW
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Technical Specifications
NXP BSH201T/R technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 300mA |
| Current Rating | -300mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 70pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 417mW |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSH201T/R Datasheet
Download the complete datasheet for NXP BSH201T/R to view detailed technical specifications.
No datasheet is available for this part.
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