NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 1A continuous collector current and 80V collector-emitter voltage (VCEO). Offers a minimum DC current gain (hFE) of 30 and a gain bandwidth product of 100MHz. Packaged in a SOT-89 surface-mount case, supplied on tape and reel. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 1.35W.
Frequency100MHz
PackageSOT-89
Current Rating1A
MountingSurface Mount
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Technical Specifications
NXP BSR43TR technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 80V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.35W |
| Radiation Hardening | No |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSR43TR Datasheet
Download the complete datasheet for NXP BSR43TR to view detailed technical specifications.
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