N-channel Silicon Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a maximum drain-source voltage of 40V and a continuous drain current of 100mA. Housed in a compact TO-236AB (SOT-23) plastic package with gull-wing leads, measuring 3mm x 1.4mm x 1mm. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 250mW.
PackageTO-236AB
MountingSurface Mount
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Technical Specifications
NXP BSR57/C,215 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
TO-236AB
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Channel Type
N
Configuration
Single
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
-40V
Maximum Continuous Drain Current
100mA
Maximum Drain Gate Voltage
40V
Material
Si
Maximum Power Dissipation
250mW
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H1R01
EU RoHS
Yes
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BSR57/C,215 Datasheet
Download the complete datasheet for NXP BSR57/C,215 to view detailed technical specifications.
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