
NPN bipolar junction transistor for general-purpose small signal applications. Features a 12V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 500MHz and a turn-on delay of 12ns. Packaged in a TO-236AB surface-mount plastic package, this RoHS compliant component offers a maximum power dissipation of 250mW and an operating temperature range of -65°C to 150°C.
NXP BSV52 technical specifications.
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Frequency | 500MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 225mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 500MHz |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 12V |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BSV52 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.