The BU1508DX,127 is a single NPN bipolar junction transistor with a collector emitter voltage rating of 700V and an emitter base voltage rating of 7.5V. It is designed to operate over a temperature range of -65°C to 150°C. The transistor is packaged in a rail/tube format for through hole mounting.
MountingThrough Hole
PolarityNPN
Power35W
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Technical Specifications
NXP BU1508DX,127 technical specifications.
General
| Collector Emitter Voltage (VCEO) | 700V |
| Emitter Base Voltage (VEBO) | 7.5V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 35W |
Compliance
| RoHS | Compliant |
Datasheet
NXP BU1508DX,127 Datasheet
Download the complete datasheet for NXP BU1508DX,127 to view detailed technical specifications.
No datasheet is available for this part.