BUJ302A

NXP BUJ302A Bipolar (BJT) Single Transistor, NPN, 1.05 kV, 80 W, 4 A, 66 hFE

PackageTO-220

PolarityNPN

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NXP BUJ302A technical specifications.

Package/Case	TO-220
Collector Emitter Breakdown Voltage	1.05kV
Collector Emitter Voltage (VCEO)	1.05kV
Max Operating Temperature	150°C
Max Power Dissipation	80W
Polarity	NPN
Reach SVHC Compliant	No
RoHS Compliant	Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.