BUJ302AX

NXP BUJ302AX Bipolar (BJT) Single Transistor, NPN, 400 V, 26 W, 4 A, 66 hFE

Capacitance220F

PolarityNPN

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NXP BUJ302AX technical specifications.

Capacitance	220F
Collector Emitter Breakdown Voltage	400V
Collector Emitter Voltage (VCEO)	400V
Max Operating Temperature	150°C
Max Power Dissipation	26W
Polarity	NPN
Reach SVHC Compliant	No
RoHS Compliant	Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.