Automotive N-channel enhancement mode power MOSFET featuring 50V drain-source voltage and 29A continuous drain current. This single-element transistor offers a low 60mOhm drain-source on-resistance and a maximum power dissipation of 75000mW. Packaged in a TO-220AB through-hole configuration with 3 pins and a tab, it operates across a wide temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
NXP BUK101-50GS,127 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Seated Plane Height (mm) | 19.3(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50V |
| Maximum Continuous Drain Current | 29A |
| Maximum Drain Source Resistance | 60mOhm |
| Maximum Power Dissipation | 75000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H1R01 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
NXP BUK101-50GS,127 Datasheet
Download the complete datasheet for NXP BUK101-50GS,127 to view detailed technical specifications.
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