
Automotive N-channel enhancement mode power MOSFET in a D2PAK (TO-263) surface-mount package. Features 50V drain-source voltage, 20A continuous drain current, and 52mOhm maximum drain-source on-resistance. This single-element transistor offers 90W maximum power dissipation and operates from -55°C to 150°C. The 3-pin lead-frame SMT package with gull-wing leads ensures robust mounting.
NXP BUK130-50DL,118 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Seated Plane Height (mm) | 4.5(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50V |
| Maximum Continuous Drain Current | 20A |
| Maximum Drain Source Resistance | 52mOhm |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H1R01 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for NXP BUK130-50DL,118 to view detailed technical specifications.
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