N-channel MOSFET featuring 75V drain-source breakdown voltage and 100A continuous drain current. Offers a low 7mR drain-source on-resistance and 204W maximum power dissipation within a TO-220AB package. Operates across a wide temperature range from -55°C to 175°C, with a 20V gate-source voltage rating. This RoHS compliant component boasts fast switching speeds with a 24ns turn-on delay.
PackageTO-220AB
PolarityN-CHANNEL
Power204W
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Technical Specifications
NXP BUK6507-75C,127 technical specifications.
General
Package/Case
TO-220AB
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
7.6MR
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.6nF
Lead Free
Lead Free
Max Dual Supply Voltage
75V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
204W
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
204W
Rds On Max
7.6mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
247ns
Turn-On Delay Time
24ns
Compliance
RoHS
Compliant
Datasheet
NXP BUK6507-75C,127 Datasheet
Download the complete datasheet for NXP BUK6507-75C,127 to view detailed technical specifications.
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