Quick Jump:
Technical Specifications
NXP BUK761R3-30E,118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 4V |
| Input Capacitance | 11.96nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 357W |
| Radiation Hardening | No |
| Rds On Max | 1.3mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 113ns |
| Turn-On Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK761R3-30E,118 Datasheet
Download the complete datasheet for NXP BUK761R3-30E,118 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.