Automotive N-channel enhancement mode power MOSFET, 40V drain-source voltage, 270A continuous drain current. Features low 2.1mΩ drain-source on-resistance at 10V gate-source voltage. Packaged in a 3-pin TO-220AB through-hole plastic package with a tab, measuring 10.3mm max length, 4.7mm max width, and 9.4mm max height. Operates from -55°C to 175°C with a maximum power dissipation of 333000mW.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
NXP BUK952R4-40C,127 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.4(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
15V
Maximum Continuous Drain Current
270A
Maximum Drain Source Resistance
2.1@10VmOhm
Typical Gate Charge @ Vgs
120@5VnC
Typical Input Capacitance @ Vds
12487@25VpF
Maximum Power Dissipation
333000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
H1R01
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
Datasheet
NXP BUK952R4-40C,127 Datasheet
Download the complete datasheet for NXP BUK952R4-40C,127 to view detailed technical specifications.
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