N-channel MOSFET featuring TrenchMOS™ technology, designed for high performance. Offers a 30V drain-to-source breakdown voltage and a low 5mΩ drain-to-source resistance. Supports a continuous drain current of 108A and a maximum power dissipation of 157W. Operates across a wide temperature range from -55°C to 175°C, packaged in SOT with tin contact plating. Lead-free and RoHS compliant.
PackageSOT
PolarityN-CHANNEL
Power157W
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Technical Specifications
NXP BUK9607-30B,118 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 108A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 98ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 3.373nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 99ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9607-30B,118 Datasheet
Download the complete datasheet for NXP BUK9607-30B,118 to view detailed technical specifications.
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