N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a maximum drain-source voltage of 40V and a continuous drain current of 100A. Offers a low drain-source on-resistance of 1.9mOhm at 10V. Designed for automotive applications with a 3-pin configuration and gull-wing leads. Operating temperature range from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
NXP BUK962R2-40C,118 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
9.4(Max)
Package Height (mm)
4.5(Max)
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
15V
Maximum Continuous Drain Current
100A
Maximum Drain Source Resistance
1.9@10VmOhm
Typical Gate Charge @ Vgs
120@5VnC
Typical Input Capacitance @ Vds
12487@25VpF
Maximum Power Dissipation
333000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
H1R01
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
Datasheet
NXP BUK962R2-40C,118 Datasheet
Download the complete datasheet for NXP BUK962R2-40C,118 to view detailed technical specifications.
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