N-channel power MOSFET in TO-261-4 package, featuring 55V drain-source breakdown voltage and 2.6A continuous drain current. This surface-mount device offers a low 150mΩ drain-source on-resistance and 8.3W maximum power dissipation. With fast switching characteristics including 11ns turn-on delay and 38ns fall time, it operates from -55°C to 150°C. Packaged on tape and reel, this RoHS compliant component is ideal for power applications.
PackageTO-261-4
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
NXP BUK98150-55,135 technical specifications.
General
| Package/Case | TO-261-4 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.7mm |
| Input Capacitance | 330pF |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK98150-55,135 Datasheet
Download the complete datasheet for NXP BUK98150-55,135 to view detailed technical specifications.
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