N-channel logic level MOSFET in a SOT package, featuring a 55V drain-source breakdown voltage and 5.5A continuous drain current. Offers a maximum drain-source on-resistance of 137mΩ at a 10V gate-source voltage. This TrenchMOS™ device boasts fast switching speeds with turn-on delay time of 8ns and fall time of 13ns. Designed for operation between -55°C and 150°C, it supports a maximum power dissipation of 8W and is lead-free and RoHS compliant.
PackageSOT
PolarityN-CHANNEL
Power8W
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Technical Specifications
NXP BUK98150-55A,135 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 137mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 150MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8W |
| Rds On Max | 137mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK98150-55A,135 Datasheet
Download the complete datasheet for NXP BUK98150-55A,135 to view detailed technical specifications.
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