N-channel TrenchMOS logic level FET in a 4-pin SC-73 package, featuring a 100V drain-to-source breakdown voltage and 7A continuous drain current. This MOSFET offers a low 72mΩ drain-to-source resistance at 10V gate-to-source voltage. It operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 8W. The component is lead-free, RoHS compliant, and utilizes tin contact plating.
PackageSOT
PolarityN-CHANNEL
Power8W
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Technical Specifications
NXP BUK9875-100A,115 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.69nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8W |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9875-100A,115 Datasheet
Download the complete datasheet for NXP BUK9875-100A,115 to view detailed technical specifications.
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