N-channel TrenchMOS logic level FET in a 4-pin SC-73 package. Features 55V drain-source breakdown voltage and 7A continuous drain current. Offers a maximum drain-source on-resistance of 73mR at 10Vgs. Operates across a wide temperature range of -55°C to 150°C with 8W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 32ns.
PackageSOT
PolarityN-CHANNEL
Power8W
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Technical Specifications
NXP BUK9880-55A,115 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 73mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 73MR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 584pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8W |
| Radiation Hardening | No |
| Rds On Max | 73mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9880-55A,115 Datasheet
Download the complete datasheet for NXP BUK9880-55A,115 to view detailed technical specifications.
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