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Technical Specifications
NXP BUK9E2R8-60E,127 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 128ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 17.45nF |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 349W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 224ns |
| Turn-On Delay Time | 71ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9E2R8-60E,127 Datasheet
Download the complete datasheet for NXP BUK9E2R8-60E,127 to view detailed technical specifications.
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