Mosfet Transistor, N Channel, 100 A, 60 V, 0.004 Ohm, 10 V, 1.7 V
PackageSOT-669
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Technical Specifications
NXP BUK9Y6R0-60E technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Nominal Vgs | 1.7V |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9Y6R0-60E Datasheet
Download the complete datasheet for NXP BUK9Y6R0-60E to view detailed technical specifications.
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