The BUT11AI,127 is a bipolar junction transistor with a collector-emitter breakdown voltage of 450V and a maximum collector current of 5A. It is packaged in a TO-220-3 plastic package and is available in quantities of 5000. The transistor is RoHS compliant and is suitable for through hole mounting. The maximum power dissipation is 100W and the collector-emitter voltage is maximized at 1.5V.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
NXP BUT11AI,127 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 450V |
| Collector-emitter Voltage-Max | 1.5V |
| Max Collector Current | 5A |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUT11AI,127 Datasheet
Download the complete datasheet for NXP BUT11AI,127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.