The BUX86P is a NPN transistor with a collector emitter breakdown voltage of 400V and a collector emitter voltage of 800mV. It has a minimum current gain of 26 and a maximum collector current of 500mA. The transistor is packaged in a SOT-82 case and is suitable for surface mount technology. It is compliant with RoHS regulations but not SVHC compliant. The BUX86P has a maximum power dissipation of 42W and is rated for operation at high voltages.
PackageSOT-82
Voltage450V
PolarityNPN
Quick Jump:
Technical Specifications
NXP BUX86P technical specifications.
General
| Package/Case | SOT-82 |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 800mV |
| hFE Min | 26 |
| Lead Pitch | 2.29mm |
| Max Collector Current | 500mA |
| Max Power Dissipation | 42W |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Voltage | 450V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUX86P Datasheet
Download the complete datasheet for NXP BUX86P to view detailed technical specifications.
No datasheet is available for this part.