The NXP MPSA92412 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA. It has a maximum power dissipation of 625mW and is packaged in a TO-226-3 cylindrical package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
Frequency50MHz
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
NXP MPSA92,412 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MPSA92,412 Datasheet
Download the complete datasheet for NXP MPSA92,412 to view detailed technical specifications.
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