The MRF18060ALR3 is a high-power N-CHANNEL RF transistor with a drain to source breakdown voltage of 65V and a frequency of 1.88GHz. It has a gain of 13dB and a maximum power dissipation of 180W. The transistor is lead free and is packaged in tape and reel quantities of 250. It operates over a temperature range of -65°C to 150°C.
Frequency1.88GHz
Voltage Rating65V
PolarityN-CHANNEL
Power60W
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Technical Specifications
NXP MRF18060ALR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.88GHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180W |
| Output Power | 60W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Test Voltage | 26V |
| Voltage Rating | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF18060ALR3 Datasheet
Download the complete datasheet for NXP MRF18060ALR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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