N-channel RF power MOSFET designed for L-band applications, operating from 1.93GHz to 1.99GHz. Features a 68V drain-to-source breakdown voltage and a maximum output power of 22W. This transistor offers a typical gain of 16.1dB at 28V test voltage and a maximum power dissipation of 398W. Packaged in SOT for screw mounting, it operates across a wide temperature range of -65°C to 225°C and is RoHS compliant.
Frequency1.99GHz
PackageSOT
Voltage Rating68V
Current Rating900mA
Quick Jump:
Technical Specifications
NXP MRF6S19100HR3 technical specifications.
General
| Package/Case | SOT |
| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 1.99GHz |
| Gain | 16.1dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 1.99GHz |
| Min Frequency | 1.93GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 22W |
| Max Power Dissipation | 398W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 22W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 398W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.226635oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S19100HR3 Datasheet
Download the complete datasheet for NXP MRF6S19100HR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
