The MRF6S19100HSR3 is a high-frequency N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum power dissipation of 398W and an output power of 22W. The device is RoHS compliant and lead free, packaged in a tape and reel format with 250 units per package. It is suitable for high-frequency applications and has a voltage rating of 68V.
Frequency1.99GHz
Voltage Rating68V
Current Rating900mA
MountingSurface Mount
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Technical Specifications
NXP MRF6S19100HSR3 technical specifications.
General
| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 1.99GHz |
| Gain | 16.1dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 398W |
| Mount | Surface Mount |
| Output Power | 22W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 398W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.16801oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S19100HSR3 Datasheet
Download the complete datasheet for NXP MRF6S19100HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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