The MRF6S21100HSR3 is a high-power N-CHANNEL RF transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum power dissipation of 388W and an output power of 23W. The transistor is packaged in a tape and reel format with a package quantity of 250 units. It is halogen free and lead free, making it suitable for use in a variety of applications.
Frequency2.17GHz
Voltage Rating68V
Current Rating950mA
PolarityN-CHANNEL
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Technical Specifications
NXP MRF6S21100HSR3 technical specifications.
General
| Current Rating | 950mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.17GHz |
| Gain | 15.9dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 388W |
| Output Power | 23W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 388W |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.16801oz |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF6S21100HSR3 Datasheet
Download the complete datasheet for NXP MRF6S21100HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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