N-channel RF power FET designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and a 1.2A current rating. Operates efficiently at 2.12GHz with a typical gain of 15.5dB, supporting up to 30W output power. This surface-mount component offers a wide operating temperature range from -65°C to 150°C and is halogen and lead-free.
Frequency2.12GHz
Voltage Rating68V
Current Rating1.2A
MountingSurface Mount
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Technical Specifications
NXP MRF6S21140HSR3 technical specifications.
General
| Current Rating | 1.2A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.12GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 500W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.238367oz |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF6S21140HSR3 Datasheet
Download the complete datasheet for NXP MRF6S21140HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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