RF Power Field-Effect Transistor, N-CHANNEL, 68V Drain to Source Breakdown Voltage, 2.4GHz Max Frequency, 20W Max Output Power, 15.4dB Gain. This transistor operates with a 12V Gate to Source Voltage and a 28V DC Rated Voltage, featuring a 1A Current Rating. Housed in a SOT package, it supports screw mounting and is designed for tape and reel packaging. The component offers a wide operating temperature range from -65°C to 225°C and is both halogen and lead-free.
Frequency2.4GHz
PackageSOT
Voltage Rating68V
Current Rating1A
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Technical Specifications
NXP MRF6S23100HR3 technical specifications.
General
| Package/Case | SOT |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.4GHz |
| Gain | 15.4dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.4GHz |
| Min Frequency | 2.3GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 330W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.226635oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S23100HR3 Datasheet
Download the complete datasheet for NXP MRF6S23100HR3 to view detailed technical specifications.
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