N-Channel RF MOSFET transistor designed for high-frequency applications. Features a 68V drain-source breakdown voltage and a 1A current rating. Operates efficiently up to 2.4GHz with a typical gain of 15.4dB. Offers a maximum output power of 20W and a substantial power dissipation of 330W. This component is RoHS compliant, lead-free, and halogen-free, packaged in a 3-pin NI-780 screw-mount package on tape and reel.
Frequency2.4GHz
Voltage Rating68V
Current Rating1A
MountingScrew
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Technical Specifications
NXP MRF6S23100HR5 technical specifications.
General
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.4GHz |
| Gain | 15.4dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.4GHz |
| Min Frequency | 2.3GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 330W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.226635oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S23100HR5 Datasheet
Download the complete datasheet for NXP MRF6S23100HR5 to view detailed technical specifications.
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