High-power RF MOSFET transistor featuring 150W output power at 220MHz, with a drain-source breakdown voltage of 110V. This N-channel device offers a maximum operating frequency of 450MHz and a typical gain of 25dB. Designed for demanding RF applications, it operates across a wide temperature range from -65°C to 225°C and is supplied in a 5-pin TO-272 package on tape and reel.
Frequency220MHz
Voltage Rating110V
MountingScrew, Surface Mount
PolarityN-CHANNEL
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Technical Specifications
NXP MRF6V2150NBR1 technical specifications.
General
| Continuous Drain Current (ID) | 2.5mA |
| Drain to Source Breakdown Voltage | 110V |
| Drain to Source Voltage (Vdss) | 110V |
| Frequency | 220MHz |
| Gain | 25dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 450MHz |
| Min Frequency | 10MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Mount | Screw, Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 220 MHz |
| Output Power | 150W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 110V |
| Weight | 0.067412oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6V2150NBR1 Datasheet
Download the complete datasheet for NXP MRF6V2150NBR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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