UHF Band RF Power MOSFET, N-Channel, featuring 110V Drain to Source Breakdown Voltage and 125W Max Output Power. Operates across a frequency range of 2MHz to 500MHz with a typical gain of 25dB. Housed in a SOT package, this component supports screw mounting and is designed for demanding applications. It boasts a wide operating temperature range from -65°C to 225°C, is Halogen Free, Lead Free, and RoHS Compliant.
Frequency225MHz
PackageSOT
Voltage Rating110V
Current Rating10uA
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Technical Specifications
NXP MRF6VP2600HR6 technical specifications.
General
| Package/Case | SOT |
| Current Rating | 10uA |
| Drain to Source Breakdown Voltage | 110V |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 110V |
| Frequency | 225MHz |
| Gain | 25dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Min Frequency | 2MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 125W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 125W |
| Package Quantity | 150 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 110V |
| Weight | 0.464036oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6VP2600HR6 Datasheet
Download the complete datasheet for NXP MRF6VP2600HR6 to view detailed technical specifications.
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