The MRF7P20040HSR3 is a high-frequency N-channel RF transistor with a voltage rating of 65V and a maximum operating temperature of 225°C. It features a continuous drain current of 150mA and a maximum output power of 10W. The transistor is packaged in a FLATPACK, R-CDFP-F4 package and is RoHS compliant. It operates over a temperature range of -65°C to 225°C and has a maximum frequency of 2.2GHz.
Frequency2.03GHz
Voltage Rating65V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
NXP MRF7P20040HSR3 technical specifications.
General
| Continuous Drain Current (ID) | 150mA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.03GHz |
| Gain | 18.2dB |
| Gate to Source Voltage (Vgs) | 10V |
| Max Frequency | 2.2GHz |
| Min Frequency | 1.8GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 10W |
| Mount | Surface Mount |
| Output Power | 10W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 65V |
| Weight | 0.22818oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF7P20040HSR3 Datasheet
Download the complete datasheet for NXP MRF7P20040HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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