The MRF8P20140WHSR3 is a surface mount N-CHANNEL RF transistor with a drain to source breakdown voltage of 65V and a frequency range of 1.88 to 2.025GHz. It has a gain of 16dB and an output power of 24W. The transistor is packaged in a 4-pin NI-780S-4 package and is compliant with ROHS regulations. It operates over a temperature range of -65 to 150°C.
Frequency1.91GHz
Voltage Rating65V
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
NXP MRF8P20140WHSR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.91GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 10V |
| Max Frequency | 2.025GHz |
| Min Frequency | 1.88GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Output Power | 24W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Weight | 0.108859oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF8P20140WHSR3 Datasheet
Download the complete datasheet for NXP MRF8P20140WHSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
