The MRF9060LSR1 is a high-frequency N-CHANNEL RF transistor with a breakdown voltage of 65V and a gain of 17dB. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 219W. The transistor is packaged in a tape and reel format with 500 units per package and is lead-free and halogen-free. It is suitable for high-power applications and is manufactured by NXP.
Frequency945MHz
Voltage Rating65V
PolarityN-CHANNEL
Power60W
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Technical Specifications
NXP MRF9060LSR1 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 945MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 15V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 219W |
| Output Power | 60W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 219W |
| Test Voltage | 26V |
| Voltage Rating | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF9060LSR1 Datasheet
Download the complete datasheet for NXP MRF9060LSR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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