PBLS2002S

NXP PBLS2002S Bipolar (BJT) Single Transistor, NPN, PNP, -20 V, 100 MHz, 700 mW, -3 A, 420 hFE

PackageSOIC

PolarityNPN, PNP

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NXP PBLS2002S technical specifications.

Package/Case	SOIC
Collector Emitter Breakdown Voltage	-20V
Collector Emitter Voltage (VCEO)	-20V
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	700mW
Packaging	Cut Tape
Polarity	NPN, PNP
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	100MHz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.