PNP Bipolar Junction Transistor (BJT) in a DFN package, designed for surface mounting. Features a low VCEsat of 250mV, with a maximum collector current of 500mA and a collector-emitter breakdown voltage of 15V. Offers a minimum hFE of 200 and a transition frequency of 280MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 430mW. This component is lead-free and RoHS compliant.
Frequency280MHz
PackageDFN
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS3515M,315 technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 280MHz |
| Gain Bandwidth Product | 280MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 430mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 430mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 280MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS3515M,315 Datasheet
Download the complete datasheet for NXP PBSS3515M,315 to view detailed technical specifications.
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