PBSS3540MB

NXP PBSS3540MB Bipolar (BJT) Single Transistor, PNP, -40 V, 300 MHz, 250 mW, -500 mA, 40 hFE

PolarityPNP

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NXP PBSS3540MB technical specifications.

Collector Emitter Breakdown Voltage

-40V

Collector Emitter Voltage (VCEO)

-40V

Max Operating Temperature

150°C

Max Power Dissipation

250mW

Polarity

PNP

Reach SVHC Compliant

RoHS Compliant

Yes

Transition Frequency

300MHz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.