NXP
PBSS5130T
TRANSISTOR 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
Frequency200MHz
PackageTO-236AB
Voltage30V
Current15A
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Technical Specifications
NXP PBSS5130T technical specifications.
General
Package/Case
TO-236AB
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
225mV
Collector Emitter Voltage (VCEO)
30V
Current
15A
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
3mm
Max Collector Current
1A
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
480mW
Mount
Surface Mount
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
300mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Voltage
30V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PBSS5130T Datasheet
Download the complete datasheet for NXP PBSS5130T to view detailed technical specifications.
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