PNP Bipolar Junction Transistor (BJT) in SOT-666 package, featuring a low V_CEsat of 455mV. This surface mount device offers a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V. With a transition frequency of 185MHz, it operates across a wide temperature range from -65°C to 150°C. The component is RoHS compliant and lead-free.
PackageSOT-666
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS5220V,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 455mV |
| Collector Emitter Voltage (VCEO) | -20V |
| Collector-emitter Voltage-Max | 390mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 185MHz |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 185MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5220V,115 Datasheet
Download the complete datasheet for NXP PBSS5220V,115 to view detailed technical specifications.
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