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Technical Specifications
NXP PBSS5230PAP,115 technical specifications.
General
| Package/Case | DFN EP |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -75mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | -30V |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 95MHz |
| Gain Bandwidth Product | 95MHz |
| hFE Min | 260 |
| Max Collector Current | -3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.45W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5230PAP,115 Datasheet
Download the complete datasheet for NXP PBSS5230PAP,115 to view detailed technical specifications.
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