The PBSS5240V,115 is a PNP bipolar junction transistor with a maximum collector current of 1.8A and a maximum breakdown voltage of 40V. It is packaged in a surface mount SOT-666 package and is suitable for operating temperatures between -65°C and 150°C. The transistor is lead free and RoHS compliant, making it suitable for use in a variety of applications. The device has a gain bandwidth product of 150MHz and a maximum power dissipation of 1.2W.
PackageSOT-666
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS5240V,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 530mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1.8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5240V,115 Datasheet
Download the complete datasheet for NXP PBSS5240V,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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