The PBSS5330X,135 is a PNP transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 3A. It has a gain bandwidth product of 100MHz and a maximum power dissipation of 1.6W. The transistor is packaged in a TO-243AA surface mount package and is suitable for operation over a temperature range of -65°C to 150°C. It is RoHS compliant and available in quantities of 4000 per reel.
PackageTO-243AA
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS5330X,135 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 320mV |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5330X,135 Datasheet
Download the complete datasheet for NXP PBSS5330X,135 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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