The NXP PBSS5330XTR is a PNP transistor with a collector base voltage of 30V and a current rating of -3A. It features a gain bandwidth product of 100MHz and a minimum current gain of 200. The transistor is packaged in a SOT-89 case and is lead free. It operates over a temperature range of -65°C to 150°C with a maximum power dissipation of 1.6W.
NXP PBSS5330XTR technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -320mV |
| Collector-emitter Voltage-Max | 30V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Package Quantity | 1000 |
| Polarity | PNP |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS5330XTR to view detailed technical specifications.
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