The PBSS5350TTR is a PNP transistor with a collector-emitter voltage maximum of 50V and a current rating of 2A. It features a gain bandwidth product of 100MHz and a minimum current gain of 200. The transistor is packaged in a lead-free SOT-23 package and is rated for operation between -65°C and 150°C. It can dissipate a maximum of 1.2W of power.
PackageSOT-23
Current Rating2A
PolarityPNP
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Technical Specifications
NXP PBSS5350TTR technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | -390mV |
| Collector-emitter Voltage-Max | 50V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5350TTR Datasheet
Download the complete datasheet for NXP PBSS5350TTR to view detailed technical specifications.
No datasheet is available for this part.