The PBSS5540Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 5A. It is packaged in a SOT-223 plastic package and is RoHS compliant. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageSOT-223
PolarityPNP
Power1.35W
Quick Jump:
Technical Specifications
NXP PBSS5540Z technical specifications.
General
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | -120mV |
| hFE Min | 250 |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.35W |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 1.35W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5540Z Datasheet
Download the complete datasheet for NXP PBSS5540Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
