The NXP PBSS9110D,115 is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 1A. It has a maximum power dissipation of 700mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TSOP package and is lead-free and RoHS compliant. It has a frequency of 100MHz and a gain bandwidth product of 100MHz.
Frequency100MHz
PackageTSOP
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
NXP PBSS9110D,115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 320mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS9110D,115 Datasheet
Download the complete datasheet for NXP PBSS9110D,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
